2. A. de Bellefon, F. Bourgeois, J. Gago, G. Schuler, P. Sonderegger, C. Aubret, P. Benoît, J.M. Brunet, P. Billoir, P. Rivet, G. Tristram, A. Volte, B. Bogdanski, D. Perrin, R. Schwarz, "New Data on pp and K-p Two-body Reactions around 90o c.m. between 3 and 12 GeV/c", Proc. XIX Int. Conf. on High Energy Physics, Tokyo 1978.

3. C. Trachsel, D. Perrin, R. Schwarz, "Étude d'un détecteur Cerenkov à aérogel avec collection de lumière indirecte", Helv. Phys. Acta 53 (1980) 655.

4. A. de Bellefon, P. Billoir, J.M. Brunet, G. Tristram, P. Sonderegger, J. Gago, L. Bachman, M. Bogdanski, D. Perrin, R. Schwarz, "Large Angle Scattering between 3 and 12 GeV/c", Helv. Phys. Acta 54 (1981) 316.

5. L. Bachman, A. de Bellefon, W. Beusch, P. Billoir, M. Bogdanski, J.M. Brunet, L. Dorsaz, J.P. Dufey, A. Ferrer, J. Gago, B. Lefièvre, D. Perrin, R. Schwarz, P. Sonderegger, G. Tristram, A. Volte, "pp pp and other Two-Body Reactions at Large Angles and Momentum Transfer", Proc. Int. Conf. on High Energy Physics, Lisbon 1981.

6. A. de Bellefon, P. Billoir, M. Bogdanski, J.M. Brunet, J. Gago, B. Lefièvre, D. Perrin, R. Schwarz, P. Sonderegger, G. Tristram, A. Volte, "-Polarization at Large pT and /t/ in -p and pp Reactions", Proc. Int. Conf. on High Energy Physics, Lisbon 1981, p. 877.

7. R. Schwarz, "Exclusive Neutral Strange Particle Production at Large Angles in -p and pp Reactions between 3 and 12 GeV/c", Ph.D. Thesis, Université de Neuchâtel, Switzerland, 1982.

8. A. de Bellefon, P. Billoir, J.M. Brunet, G. Tristram, J. Gago, P. Sonderegger, L. Bachman, M. Bogdanski, D. Perrin, R. Schwarz, "Differential Cross Section and -Polarization in the Hypercharge Exchange Reaction -p Ko/o at Large /t/ between 3 and 8 GeV/c", Helv. Phys. Acta 55 (1982) 250.

9. A. de Bellefon, P. Billoir, J.M. Brunet, G. Tristram, J. Gago, P. Sonderegger, L. Bachman, M. Bogdanski, D. Perrin, R. Schwarz, "Hyperon Polarization at High pT in the Reactions -p Ko/o and pp /o between 3 and 12 GeV/c", 5th Int. Symp. on High Energy Spin Physics, BNL 1982, AIP Conf. Proc. 95 (1983) 114.

10. R. Schwarz, H. Curtins, A.V. Shah, "The Holo-loop - a Holographic Solar Concentrator", Proc. 5th ECPV Solar Energy Conf., Athens 1983, p. 262.

11. R. Tscharner, H. Curtins, J.P. Haering, R. Schwarz, A.V. Shah, "Low  Temperature Liquid PV/T Collectors", Proc. 5th ECPV Solar Energy Conf., Athens 1983, p. 560.

12. R. Tscharner, H. Curtins, J.P. Haering, R. Schwarz, A.V. Shah, "Capteurs hybrides plans", 4ème Symposium en énergie solaire, Lausanne 1983.

13. R. Schwarz, K.H.S. Rao, R. Tscharner, "Computer-aided Analysis of Thermal Images of Solar Cells and Solar PV/T Collectors", Proc. 5th EC PV Solar Energy Conf., Athens 1983, p. 672.

14. R. Schwarz, C. Matthey, "Diffusion Length and Junction Depth Determination Based on Spectral Response Measurements of Mono- and Polycrystalline Silicon Solar Cells", Helv. Phys. Acta 57 (1984) 687.

15. R. Tscharner, K.H.S. Rao, R. Schwarz, A.V. Shah, "Evaluation of Photovoltaic Panels with IR Thermography", Cambridge Symp. on Opt. and Electro-Opt. Engineering - Thermosense VII, Cambridge 1984, SPIE Conf. Proc. Vol. 520 (1984).

16. R. Schwarz, S. Wagner, R.T. Kouzes, R.D. Wieting, "Determination of Amorphous Silicon Alloy Composition by Nuclear Elastic Scattering of 12 MeV Protons", Proc. of 1st Int. Photovoltaic Sci. and Eng. Conf., Kobe 1984, p. 739.

17. L. Bachman, M. Bogdanski, E. Jeannet, D. Perrin, R. Schwarz, J. Gago, P. Sonderegger, A. de Bellefon, P. Billoir, J.M. Brunet,  P. Rivet, G. Tristram, A. Volte, "Large Angle o Production in Exclusive Reactions between 3 and 12 GeV/c", Nucl. Phys. B263 (1985) 458.

18. R. Schwarz, S. Wagner, R.T. Kouzes, R.D. Wieting, "Composition of Amorphous (Si,Ge):H Films from Nuclear Elastic Scattering of 12 MeV Protons", Appl. Phys. Lett. 46 (1985) 552.

19. R. Schwarz, D. Slobodin, S. Wagner, "Differential Surface Photovoltage Measurement of Minority-carrier Diffusion Length in Thin Films", Appl. Phys. Lett. 47 (1985) 740.

20. D. Slobodin, S. Aljishi, R. Schwarz and S. Wagner, "Preparation of a-(Si,Ge):H Alloys by d.c. Glow Discharge Deposition", Mat. Res. Soc. Symp. Proc. 49 (1985) 153.

21. R. Schwarz, D. Slobodin, S. Wagner, "The Differential Surface Photovoltage Method", Proc. of 6th EC PV Solar Energy Conf., London, April 1985, p. 187.

22. J. Kolodzey, D. Slobodin, S. Aljishi, S. Quinlan, R. Schwarz, D.S. Shen, P.M. Fauchet, S. Wagner, "Transport Properties of a-Si,Ge:H Alloys Prepared from SiH4, GeH4, and H2 in r.f. or d.c. Glow Discharges", J. of Non-Cryst. Sol. 77&78 (1985) 897.
 
23. D. Slobodin, J. Kolodzey, S. Aljishi, Y. Okada, V. Chu, D.-S. Shen, R. Schwarz, S. Wagner, "a-Si1-xGex:H,F Alloys Prepared by d.c. and r.f. Glow Discharge Depo-sition", Proc. of 18th IEEE Photovolt. Spec. Conf., Las Vegas, October 1985, p. 1505.

24. R. Schwarz, C.-L. Chiang, S. Quinlan, D. Slobodin, S. Wagner, "Calculation and Measurement of Surface Photovoltage in Thin Film Back-to-back Surface Barrier Structures in a-Si:H", Proc. of 18th IEEE Photovolt. Spec. Conf., Las Vegas, October 1985, p. 1290.
 
25. R. Schwarz, J. Kolodzey, S. Aljishi, S. Wagner, "Radiation Damage by 12 MeV Protons and Annealing of Hydrogenated Amorphous Silicon", Proc. of 18th IEEE Photovolt. Spec. Conf., Las Vegas, October 1985, p. 903.
 
26. J. Kolodzey, S. Aljishi, R. Schwarz, S. Wagner, "Properties of a-Si,Ge:H,F Alloys Prepared by rf Glow Discharge in an Ultrahigh Vacuum Reactor", J. Vac. Sci. Technol. A4 (1986) 2499.
 
27. Y. Okada, D. Slobodin, S.F. Chou, R. Schwarz, S. Wagner, "Infrared Spectroscopy of Deuterated a-SiGe:D,F Alloys Prepared by d.c. Glow Discharge Deposition", Mat. Res. Soc. Symp. Proc. 70 (1986) 289.
 
28. J. Kolodzey, S. Aljishi, Z.E. Smith, V. Chu, R. Schwarz, S. Wagner, "Measurements of Light-Induced Degradation in a-SiGe:H,F Alloys", Mat. Res. Soc. Symp. Proc. 70 (1986) 237.
 
29. J. Kolodzey, S. Aljishi, R. Schwarz, D.S. Shen, S. Quinlan, S.A. Lyon, S. Wagner, "Electron and Hole Transport Perpendicular to the Planes of a-Si:H/a-Si,Ge:H Compositional Superlattices", Mat. Res. Soc. Symp. Proc. 70 (1986) 429.
 
30. R. Schwarz, Y. Okada, S.F. Chou, J. Kolodzey, D. Slobodin, S. Wagner, "Fluorine Incorporation and Annealing Properties of a-SiGe:H,F Alloys Studied by Elastic Proton Scattering and IR Absorption", Mat. Res. Soc. Symp. Proc. 70 (1986) 283.

31. S. Aljishi, Z.E. Smith, D. Slobodin, J. Kolodzey, V. Chu, R. Schwarz, S. Wagner, "Electronic Transport and the Density of States Distribution in a-(Si,Ge):H,F Alloys", Mat. Res. Soc. Symp. Proc. 70 (1986) 269.
 
32. C.-L. Chiang, R. Schwarz, D. Slobodin, J. Kolodzey, S. Wagner, "Measurements of the Minority Carrier Diffusion Length in Thin Semiconductor Films", IEEE Trans. on Elec. Dev. ED-33 (1986) 1587.

33. H.-E. Schaefer, R. Wuerschum, R. Schwarz, D. Slobodin, S. Wagner, "Amorphous Hydrogenated Silicon Studied by Positron Lifetime Spectroscopy", Appl. Phys. A40 (1986) 145.
 
34. J. Kolodzey, Y. Okada, D.-S. Shen, S.-F. Chou, R. Schwarz, S. Wagner, "X-Ray Diffraction and Infrared Absorption of Annealed a-Si:H,F/a-Si1-xGex:H,F Superlattices", in Semiconductor-Based Heterostructures, M.L. Green et al. eds, (The Metallurgical Society, Warrendale, 1986) p. 223.
 
35. J. Kolodzey, R. Schwarz, S. Aljishi, D.-S. Shen, I. Campbell, P.M. Fauchet, S.A. Lyon, S. Wagner, "Carrier Scattering at Periodic a-Si:H,F Barriers in a-Si,Ge:H,F Alloys", Superlattices and Microstructures 2 (1986) 391.
 
36. S. Wagner, D. Slobodin, J. Kolodzey, S. Aljishi, R. Schwarz, "Alloys of Amorphous Hydrogenated Silicon", Acta-Scripta Met. Proc. Ser. 3 (1986) 334.
 
37. R. Schwarz, J.S. Kolodzey, S. Wagner, R.T. Kouzes, "Simultaneous Depth Profiling of Constituents and Impurities by Elastic Proton Scattering in Amorphous Hydrogenated Silicon Films", Appl. Phys. Lett. 50 (1987) 188.
 
38. C.R. Wronski, Z E. Smith, S. Aljishi, V. Chu, K. Shepard, D.-S. Shen, R. Schwarz, D. Slobodin, S. Wagner, "Sub-bandgap Optical Absorption and Light-Induced Defects in Amorphous Silicon", Int. Conf. on Stability of Amorph. Silicon, Palo Alto, January 1987.
 
39. R. Schwarz, J. Kolodzey, D. Slobodin, Y. Okada, V. Chu, S. Aljishi, Z E. Smith, S. Wagner, "Comparison of Diffusion Length in a-Si,Ge:H,F after Light or Proton Irradiation", Int. Conf. on Stability of Amorph. Silicon, Palo Alto, January 1987.

40. S. Wagner, Y. Okada, D. Slobodin, S.F. Chou, R. Schwarz, Z E. Smith, "Fluorine Equilibria in a-Si,Ge:H,F Alloys", Snowbird Workshop on Departures from Equilibrium in Amorphous Semiconductors, April 1987.

41. S.F. Chou, R. Schwarz, Y. Okada, D. Slobodin, S. Wagner, "Hydrogen Diffusion in Undoped a-Si:H", Mat.Res. Soc. Symp. Proc. 95 (1987) 165.
 
42. R. Schwarz, K. Dietrich, S. Goedecker, J. Kolodzey, D. Slobodin, S. Wagner, "Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F Alloys", Mat. Res. Soc. Symp. Proc. 95 (1987) 353.
 
43. R. Schwarz, S. Goedecker, T. Muschik, N. Wyrsch, A.V. Shah, H. Curtins, "Measurement of Surface Photovoltage in High-rate Deposited a-Si:H Films and Comparison with Photothermal Deflection Spectroscopy and Conductivity Data", J. Non-Cryst. Solids 97&98 (1987) 759.
 
44. J. Kolodzey, R. Schwarz, S. Aljishi, V.Chu, D.-S. Shen, P.M. Fauchet, and S. Wagner, "Optical and Electronic Properties of an Amorphous Silicon-Germanium Alloy with a 1.28 eV Optical Gap", Appl. Phys. Lett. 52 (1988) 477.
 
45. T. Muschik, R. Schwarz, H. Curtins, M. Favre, "Photoluminescence Quenching by Electric Fields in Hydrogenated Amorphous Silicon", Proc. 20th IEEE Photovolt. Spec. Conf., Las Vegas, 1988, p. 191.
 
46. S. Goedecker, R. Schwarz, "Nonlinear Recombination and Diffusion in Amorphous Semiconductor Films", Helv. Phys. Acta 61 (1988) 144.
 
47. R. Schwarz, A.M. Asenov, S. Goedecker, E. Chitate, "Carrier Diffusion and Drift in a-Si:H Schottky Barrier Devices", Proc. of 8th ECPV Solar Energy Conf., Florence, 1988, p. 954.
 
48. W. Kopetzky, R. Schwarz, "Two-dimensional Simulation of Surface and Interface Effects on the Photocurrent in a-Si:H films", Proc. of 9th ECPV Solar Energy Conf., Freiburg, 1989, p. 1024.
49. N. Bernhard, M. Kirsch, R. Eigenschenk, M. Bollu, C. Wetzel, F. Mueller, R. Schwarz, "High Quality Interfaces in a-Si:H/a-SiC:H Superlattices", Mat. Res. Soc. Symp. Proc. 192 (1990) 237.

50. T. Muschik, R. Schwarz and F. Karg, "Characterization of Band Tail States in Amorphous Silicon Alloys by Temperature Dependent Photoluminescence", J. of Luminescence 48&49 (1991) 636.
 
51. T. Muschik, R. Schwarz, M. Hammam, S.M. Al-Alawi, S. Al-Dallal, S. Aljishi, M. Stutzmann and S. Jin, "Compositional Dependence of Photoluminescence Spectra in Hydrogenated Amorphous Silicon-sulfur Alloys", J. of Luminescence 48&49 (1991) 641.
 
52. R. Schwarz, F. Wang, R. Eigenschenk, M. Bollu, W. Kopetzky and N. Bernhard, "Effect of Interface Defects on the Response Time of a-Si:H/a-SiC:H Superlattices", J. Superlattices and  Microstructures 10 (1991) 147.
 
53. S. Aljishi, S. Al-Dallal, S.M. Al-Alawi, M. Hammam, H.S. Al-Alawi, M. Stutzmann, S. Jin, T. Muschik, and R. Schwarz, Solar Energy Mat. 23 (1991) 34.
 
54. J. Kolodzey, P. Hanesch, T. Fischer, T. Muschik and R. Schwarz, "Interdiffusion in Amorphous Si/SiC Multilayers", Mat. Sci. and Eng. B11 (1992) 43.
 
55. R. Schwarz, T. Fischer, P. Hanesch, J. Kolodzey, H. Oppolzer, H. Cerva, H.L. Meyerheim and B.M.U. Scherzer, "Limitations of Interface Sharpness in a-Si:H/a-SiC:H Multilayers", Appl. Surf. Science 50 (1991) 456.
 
56. G. Zorn, J. Kolodzey, H. Göbel, T. Fischer, P. Hanesch, and R. Schwarz, "Hydrogen Loss and Interdiffusion in Amorphous SiC Multilayers", 1st Int. Powder Diffraction Conf., Munich, March 1991, p. 887.
 
57. T. Fischer, T. Muschik, P. Hanesch, J. Kolodzey, R. Schwarz, G. Neff, H. Schneider and M. Stanger, "Thermal Stability of a-Si:H/a-SiC:H Superlattices Studied by Hydrogen Effusion, X-ray Diffraction, IR Spectroscopy, and Photoluminescence", 10th ECPV Conf., Lisbon, April 1991, p. 383.
 
58. W. Kopetzky and R. Schwarz, "Influence of the Buffer Layer of a-SiC:H/a-Si:H pin Solar Cells on the Spectral Response", 10th ECPV Conf., Lisbon, April 1991, p. 188.
 
59. W. Stadler, F. Wang, R. Schwarz, K. Oettinger, B.K. Meyer, D.M. Hofmann, D. Sinerius, and K.W. Benz, "Photoluminescence and Transport Investigations in CdTe", in Non-Stoichiometry in Semiconductors, edited by K.J. Bachmann, H.-L. Hwang, and C. Schwab (Elsevier, Amsterdam, 1992) p. 205.
 
60. S. Al-Dallal, S. Aljishi, M. Hammam, S.M. Al-Alawi, M. Stutzmann, S. Jin, T. Muschik, and R. Schwarz, "High Bandgap Hydrogenated Amorphous Silicon-Selenium Alloys", J. Appl. Phys. 70 (1991) 4926.
 
61. F. Wang and R. Schwarz, "High-Temperature Annealing Behavior of mt-Products of Electrons and Holes in a-Si:H", J. Appl. Phys. 71 (1992) 791.
62. F. Wang, X.N. Liu, Y.L. He, A. Schweiger, and R. Schwarz, "Transient and Steady-State Optoelectrical Properties of mc-Si:H", J. Non-Cryst. Sol. 137&138 (1991) 511.

63. Th. Ihn, A.K. Savchenko, M.E. Raikh, and R. Schwarz, "Current Fluctuations in Thin a-SiC:H Films", J. Non-Cryst. Sol. 137&138 (1991) 523.
 
64. F. Wang, T. Muschik, T. Fischer, M. Bollu, J. Kolodzey, and R. Schwarz, "Asymmetric Degradation of Electron and Hole mt-Products in a-Si:H/a-SiC:H Multilayers under Illumination", J. Non-Cryst. Sol. 137&138 (1991) 1143.
 
65. W.J. Kopetzky, H. Pfleiderer, and R. Schwarz, "Trace of an Interface Layer Between Buffer and i-Layer in the Spectral Response of a-Si:H Solar Cells", J. Non-Cryst. Sol. 137&138 (1991) 1201.
 
66. M. Beaudoin, M. Meunier, C. Arsenault, T. Muschik, R. Schwarz, S. Gujrathi, "A propos du gap optique de multicouches a-Si:H/a-SiNx:H", 60ème Congrès de l'ACFAS, Montréal, Québec, 1992.
 
67. R. Schwarz, T. Muschik, F. Wang, and T. Fischer, "Optoelectronic Characteristics of Interface Defects in a-SiC:H Heterostructures", Proc. Int. Conf. on Cond. Matter Phys. and Appl., ICCMPA, Bahrein, April 1992.

68. S. Al-Dallal et al., "Preparation of a-SiS:H Multilayers ", Proc. Int. Conf. on Cond. Matter Phys.and Appl., ICCMPA, Bahrein, April 1992.
 
69. T. Muschik, T. Fischer and R. Schwarz, "Recombination Lifetimes in a-Si:H/a-SiC:H Multilayers", Mat. Res. Soc. Symp. Proc. 258 (1992) 565.
 
70. R. Schwarz, T. Fischer, P. Hanesch, J. Lanz, W. Schirmacher, J. Kolodzey, G. Zorn, and H.E. Göbel, "Anomalous Carbon Interdiffusion in a-Si:H/a-SiC:H Multilayers", Mat. Res. Soc. Symp. Proc. 258 (1992) 559.
 
71. M. Petrauskas, J. Kolenda, A. Galeckas, R. Schwarz, F. Wang, T. Muschik, T. Fischer, and H. Weinert, "Non-Equilibrium Carrier Dynamics in a-Si:H/a-SiC:H Multilayers", Mat. Res. Soc. Symp. Proc. 258 (1992) 553.
 
72. J. Kolodzey, R. Schwarz, F. Wang, T. Muschik, J. Krajewski, R. Shekhar, M. Barteau, R. Plättner, and E. Günzel, "Optoelectronic Properties of Amorphous SiGeC Alloys", Mat. Res. Soc. Symp. Proc. 258 (1992) 637.
 
73. S. Koynov, T. Fischer, R. Schwarz, and R. Schorer, "Properties and Stability of Low Hydrogen Content a-Si:H Films prepared by Cyclic CVD Deposition and Hydrogenation", Mat. Sci. and Eng. B17 (1993) 82.

74. M. Beaudoin, M. Meunier, T. Muschik, R. Schwarz, C.J. Arsenault, M. Beaulieu, O. Grimal, "Interfaces effectives et pentes d'Urbach de multicouches a-Si:H/a-SiNx:H", Can. J. Phys. 70 (1992) 824.
 

75. F. Wang, R. Schwarz, M. Beaudoin, and M. Meunier "Electron and Hole mt-Products in a-Si:H/a-SiNx:H Multilayers", J. of Superlattices and Microstructures 12 (1992) 549.

76. F. Wang, R. Schwarz, S. Grebner, H.N. Liu, Y.L. He, and C.Z. Yin, "Effect of Crystallinity on the Optoelectronic Properties of Hydrogenated Microcrystalline Silicon", Proc. Int. Conf. of Phys. of Semicond., 21st ICPS, Bejing, August 1992, p. 2008.
 
77. T. Fischer, P. Hanesch, F. Wang, and R. Schwarz, "Stability of B-doped Multilayers", Proc. 11th EC Photovoltaic Sol. En. Conf., Montreux, October 1992, p. 633.
 
78. M. Lampert, W. Krühler, and R. Schwarz, "A New Analytical Model for Transient Charge Collection Measurements on PIN-Diodes", Proc. 11th EC Photovoltaic Sol. En. Conf., Montreux, October 1992, p. 773.
 
79. G. Juska, K. Arlauskas, R. Schwarz, and S: Vengris, "Charge Transport in a-Si:H/a-SiC:H Multilayers", Lit. J. of Phys. 32 (1992) 19.
 
80. S. Grebner, F. Wang, and R. Schwarz, "Carrier Transport Through Grain Boundaries in Hydrogenated Microcrystalline Silicon", Mat. Res. Soc. Symp. Proc. 283 (1993) 513.
 
81. A.B. Pevtsov, A.G. Pilatov, N.A. Feoktistov, A.V. Zherzdev, S.M. Karabanov, T. Muschik, D. Zrenner, and R. Schwarz, "Electroluminescence as a Function of Electric Field and Temperature in Amorphous Silicon-Carbon Based p-i-n Structures",  Mat. Res. Soc. Symp. Proc. 283 (1993) 597.
 
82. M.D. Lampert, W. Krühler, and R. Schwarz, "Position-dependent Electronic Properties of a-Si:H PIN Diodes", J. Appl. Phys. 75 (1994) 2110.
 
83. W. Kopetzky and R. Schwarz, "Numerical Evaluation of Amorphous Silicon p-i-n Solar Cell Degradation", Appl. Phys. Lett. 62 (1993) 2959.
 
84. F. Wang, M. Reissner, T. Fischer, S. Grebner, and R. Schwarz, "Steady-state Photocarrier Grating Technique Applied to a-Si:H Thin Film Transistors", Mat. Res. Soc. Symp. Proc. 297 (1993) 491.
 
85. H. Weinert, M. Petrauskas, J. Kolenda, A. Galeckas, F. Wang, and R. Schwarz, "Ampibolar Diffusion Coefficients in a-SiC:H Alloys in Steady-state and Transient Grating Measurements", Mat. Res. Soc. Symp. Proc. 297 (1993) 497.

86. P. Brogueira, B. Reichwein, S. Grebner, F. Wang, R. Schwarz, V. Chu, and J.P. Conde, "Low Filament Temperature Deposition of a-SiC:H by CAT-CVD", Mat. Res. Soc. Symp. Proc. 297 (1993) 121.
 
87. H.-C. Ostendorf, R. Schwarz, W. Kusian, and W. Krühler, "CPM Characterization of Light and Current Stressed a-Si:H Diodes with nin, pip, and pin Structures", Proc. 23rd IEEE Photovolt. Spec. Conf., Louisville 1993, p. 872.

87(a). X.N. Liu, Y.L. He, F. Wang, and R. Schwarz, “Photoabsorption Spectra of Nano-Crystalline Silicon Films”, Chinese Phys. Lett. 10 (1993) 752.

88. F. Wang, T. Fischer, T. Muschik, and R. Schwarz, "Characterization of Interface Properties in a-Si:H/a-SiC:H Multilayers by the Constant Photocurrent Method", Phil. Mag. B68 (1993) 737.

89. R. Schwarz, F. Wang, M. Reissner, "Fermi Level Dependence of the Ambipolar Diffusion Length in Amorphous Silicon Thin Film Transistors", Appl. Phys. Lett. 63 (1993) 1083.
 
90. R. Schwarz, F. Wang, S. Grebner, T. Fischer, S. Koynov, V. Chu, P. Brogueira, and J. Conde, "Response Time Measurements in Microcrystalline Silicon", J. Non-Cryst. Sol. 164-166 (1993) 477.
 
91. T. Muschik and R. Schwarz, "Temperature Dependence of Radiative and Non-radiative Lifetimes in Hydrogenated Amorphous Silicon", J. Non-Cryst. Sol. 164-166 (1993) 619.
 
92. F. Wang and R. Schwarz, "Characterization of Optoelectronic Properties of a-SiC:H Films", J. Non-Cryst. Sol. 164-166 (1993) 1039.
 
93. K. Arlauskas, G. Juska, R. Schwarz, and T. Fischer, "Charge Transport Along and Across a-Si:H/a-SiC:H Multilayers", J. Non-Cryst. Sol. 164-166 (1993) 873.
 
94. H.C. Ostendorf, W. Kusian, W. KrUhler, and R. Schwarz, "Light and Current Degradation of a-Si:H n-i-n and p-i-p Diodes Detected with CPM", J. Non-Cryst. Sol. 164-166 (1993) 659.
 
95. G. Dollinger, T. Faestermann, C.M. Frey, A. Bergmaier, E. Schwabedissen, T. Fischer, and R. Schwarz, "Depth Microscopy at Interfaces", Nucl. Instr. & Meth. B85 (1994) 786.
 
96. X.N. Liu, Y.L. He, F. Wang, and R. Schwarz, Acta Phys. Sinica 42 (1993) 1979.
 
97. S. Koynov, R. Schwarz, T. Fischer, S. Grebner, and H. Münder, "Closed-Chamber Chemical Vapor Deposition: New Cyclic Method for Preparation of Microcrystalline Silicon Films", Jpn. J. Appl. Phys. 33 (1994) 4534.
 
98. R. Schwarz, S. Koynov, T. Fischer, "Process for Depositing Microcrystalline Layers and the Use Thereof", 1993, German Patent No. P 43 33 416.

99. S. Koynov, T. Fischer, S. Grebner, and R. Schwarz, "Cyclic-CVD for Preparation of Silicon Films of Adjustable Structure", Mat. Res. Soc. Symp. Proc. 336 (1994) 103.
 
100. R. Schwarz, F. Wang, and D. Schuster, "Transport Studies by Steady-State and Transient Photocarrier Grating Methods", Mat. Res. Soc. Symp. Proc. 336 (1994) 359.
 
101. F. Wang and R. Schwarz, "The Electrically Detected Transient Photocarrier Grating Method", Appl. Phys. Lett. 65 (1994) 884.

102. T. Muschik and R. Schwarz, "Electric Field Dependence of Low Temperature Recombination in a-Si:H", Phys. Rev. B51 (1995) 5078.

103. F. Wang, T. Fischer, and R. Schwarz, "Effect of the Barrier Thickness on Interface Defect Density in Amorphous-Si:H/Amorphous-Si1-xCx:H Multilayers", Appl. Phys. Lett. 65 (1994) 2798.

104. R. Schwarz, F. Wang, M. Ben-Chorin, S. Grebner, A. Nikolov, and F. Koch,  "Photocarrier Grating Method in Mesoporous Silicon", Thin Sol. Films 255 (1995) 23.

105. F. Wang, S. Grebner, M. Reissner, and R. Schwarz, "Effect of Interface Recombination on Steady-State Photocarrier Grating Measurements in a-Si:H Thin Film Transistors", Proc. 2nd Symp. on Thin Film Transistor Technologies, Y. Kuo ed., Vol. 94-35 (Electrochemical Society, Pennington, 1995), p. 233.

106. M. Vieira, A. Fantoni, R. Martins, V. Chu, S. Koynov, F. Wang, S. Grebner, and R. Schwarz, "Comparison of Diffusion Length Measurements from the Flying Spot Technique and the Photocoarrier Grating Method in Amorphous and Microcrystalline Thin Films", Proc. of the 1st World Conf. on Photovoltaic Energy Conversion (WCPEC-1), Hawaii, December 1994, Vol. 2, p.575.

107. T. Fischer, T. Muschik, R. Schwarz, D. Kovalev, and F. Koch, "Luminescence Properties of Silicon Oxynitride Films", Mat. Res. Soc. Symp. Proc. 358 (1994) 851.

108. M. Ben-Chorin, S. Grebner, F. Wang, R. Schwarz, A. Nikolov, and F. Koch, "Electrical Transport in Mesoporous Silicon Layers", Mat. Res. Soc. Symp. Proc. 358 (1994) 575.

109. T. Muschik and R. Schwarz, "Electric Field Dependence of Photoluminescence in a-Si:H", Solid State Phenomena, Vols. 44-46, H. Neber-Aeschbacher ed. (Transtech/ Scitec, Zürich, 1995), p. 275.

110. R. Schwarz, F. Wang, S. Grebner, Q. Gu, and E.A. Schiff, "Drift, Diffusion and Recombination of Holes in a-Si:H", Mat. Res. Soc. Symp. Proc. 377 (1995) 427.

111. I. Sieber, I. Urban, I. Dörfel, S. Koynov, R. Schwarz, and M. Schmidt, "Microscopic Characterization of Microcrystalline Silicon Thin Films", Thin Solid Films 276 (1995) 314.

112. R. Krankenhagen, M. Schmidt, W. Henrion, I. Sieber, S. Koynov, S. Grebner, and R. Schwarz, "Determination of Subgap Absorption in mc-Si:H Films by CPM", Solid State Phenomena, Vols. 47-48, H. Richter, M. Kittler, C.L. Claeys eds. (Transtech/Scitec, Zürich, 1995), p. 607.

113. F. Wang and R. Schwarz, "Comprehensive Numerical Simulation of Defect Density and Temperature Dependent Transport Properties in Hydrogenated Amorphous Silicon", Phys. Rev. B52 (1995) 14586.

114. A. Galeckas, M. Petrauskas, F. Wang, and R. Schwarz, "Carrier Relaxation in a-Si:H/a-SiC:H Multilayers Studied by Picosecond Transient Reflectometry", phys. stat. sol. (b) 190 (1995) 587.

115. A.B. Pevtsov, A.V. Zherzdev, N.A. Feoktistov, G. Juska, T. Muschik, and R. Schwarz, "Electroluminescence in a-Si:C:H p-i-n Structures", Int. J. Electronics 78 (1995) 289.

116. S. Koynov, S. Grebner, P. Radojkovic, E. Hartmann, R. Schwarz, L. Vasilev, R. Krankenhagen, I. Sieber, W. Henrion, M. Schmidt, "Initial Stages of Microcrystalline Silicon Film Growth", J. Non-Cryst. Sol. 198-200 (1996) 1012.

117. R. Schwarz, S. Grebner, P. Popovic, and F. Wang, "Potocurrent Response Times in Amorphous Silicon Thin Film Transistors", J. Non-Cryst. Sol. 198-200 (1996) 234.
 
118. R. Krankenhagen, M. Schmidt, S. Grebner, M. Poschenrieder, W. Henrion, I. Sieber, S. Koynov, and R. Schwarz, "Correlation Between Structural, Optical and Electrical Properties of mc-Si Films", J. Non-Cryst. Sol. 198-200 (1996) 923.

119. F. Wang and R. Schwarz, "Stability of the Mobility-Lifetime Product of Holes in Undoped a-Si:H under Illumination", J. Non-Cryst. Sol. 198-200 (1996) 423.

120. P. Popovic, E. Bassanese, F. Smole, J. Furlan, S. Grebner, and R. Schwarz, "Numerical Simulation of Photoconductivity in a-Si:H", Proc. of 23rd Int. Conf. on Microelectronics (MIEL '95), Terme Catez, Slovenia, 1995, p. 333.

121. G. Juska, K. Arlauskas, R. Schwarz, T. Fischer, and A. Suchododiskis, "Electron Tunneling in a-Si:H/a-SixC1-x:H Multilayers", Proc. 9th Vilnius Symp. on Ultrafast Phen. in Semicond. (9-UFPS), Vilnius, September 1995.

122. R. Krankenhagen, M. Schmidt, S. Koynov, S. Grebner, W. Henrion, I. Sieber, and R. Schwarz, "Absorption and Transport Properties of Microcrystalline Si Films Prepared by CC-CVD", Proc. 13th ECPV Conf., Nice, October 1995.

123. R. Schwarz, F. Wang, S. Grebner, P. Popovic, J. Furlan, A. Fantoni, and M. Vieira, "Numerical Simulation and Measurement of the Minority Carrier Diffusion Length and Photocarrier Response Time in Thin Film Semiconductors like Poly-Si, CdTe, CIS, and GaAs", Proc. 13th ECPV Conf., Nice 1995, p. 1619.

124. A. Fantoni, M. Vieira, J. Cruz, R. Martins, and R. Schwarz, "A 2-D Numerical Simulation of Solar Cell Analysis under Non-uniform Illumination", Proc. 13th ECPV Conf., Nice, October 1995.

125. J.P. Conde, M. Silva, V. Chu, H. Gleskova, K. Vasanth, S. Wagner, D.S. Shen, P. Popovic, S. Grebner, and R. Schwarz, "In-plane Photoconductivity in Amorphous Silicon Doping Multilayers", Phil. Mag. B74 (1996) 331.

126. Q. Gu, E.A. Schiff, S. Grebner, F. Wang, and R. Schwarz, "Non-Gaussian Transport Measurements and the Einstein Relation in Amorphous Silicon", Phys. Rev. Lett. B76 (1996) 3196.

127. S. Grebner, P. Popovic, J. Furlan, Qing Gu, and R. Schwarz, "The Increased Response Time in Hydrogenated Microcrystalline Silicon - a Fermi Level Effect or a Structural Effect in a Grainy Material?", Mat. Res. Soc. Symp. Proc. 420 (1996) 795.

128. N.A. Feoktistov, N.L. Ivanova, L.E. Morozova, Yu.A. Nikulin, A.P. Onochov, A.B. Pevtsov, and R. Schwarz, "Amorphous Silicon-Carbon Thin Film p-i-n Structures for Liquid-Crystal Spatial Light Modulators", Mat. Res. Soc. Symp. Proc. 420 (1996) 189.

129. R. Schwarz, S. Grebner, C.E. Nebel, M. Lanz, and M. Stutzmann, "Interdiffusion and Carrier Recombination in High Intensity Transient Gratings", Mat. Res. Soc. Symp. Proc. 420 (1996) 723.

130. C. Manfredotti, F. Fizzotti, E. Vittone, P. Polesello, F. Wang, R. Schwarz, and S. Grebner, "A Study of Electroluminescent Emission from CVD Diamond", III-Nitride, SiC and Diamond Materials for Electronic Devices, Mat. Res. Soc. Symp. Proc. (1996) 687.

131. A. Fantoni, M. Vieira, J. Cruz, R. Schwarz, and R. Martins, "A Two-dimensional Numerical Simulation of a Non-uniformly Illuminated Amorphous Silicon Solar Cell", J. Phys. D: Appl. Phys. 29 (1996) 3154.

132. P. Popovic, S. Grebner, E. Bassanese, F. Smole, J. Furlan, and R. Schwarz, "Response Time Distribution - a Way to Describe the Photocurrent Transient", Proc. of 25th IEEE PVSC, Washington, USA, May 1996.

133. P. Popovic, E. Bassanese, F. Smole, J. Furlan, S. Grebner, and R. Schwarz, "Transient Response of the Secondary Photocurrent in Amorphous Silicon", Proc. of 24th Int. Conf. on Microelectronics (MIEL '96), Nova Gorica, Slovenia, 1996.

134. P. Popovic, E. Bassanese, F. Smole, J. Furlan, S. Grebner, and R. Schwarz, "Numerical Analysis of the Secondary Photocurrent Transient Response in Amorphous Silicon", Proc. of 9th Int. Photovoltaic Science and Engineering Conf. (PVSEC-9), Myazaki, Japan, November 1996.

135. R. Schwarz, S. Grebner, S. Koynov, and M. Vieira, "Microcrystalline Silicon Thin Films Grown by Cyclic CVD", Proc. of CYTED, Ibero-American Symposium, Costa da Caparica, Portugal, October 1996.

136. M. Vieira, S. Koynov, A. Fantoni, R. Schwarz, "Wide Spectral Response in mc-Si:H Photodiodes", Thin Solid Films 296 (1997) 164.

137. Lin Jiang, E.A. Schiff, F. Finger, R. Schwarz, N. Wyrsch, P. Torres, and A.V. Shah, "Electroabsorption Spectra of Amorphous and Microcrystalline Silicon", Mat. Res. Soc. Symp. Proc. 467 (1997) 295.

138. S. Koynov, S. Grebner, R. Schwarz, L. Vassilev, I. Sieber, M. Schmidt, and W. Fuhs, "Injection Doping of Ultrathin Microcrystalline Silicon Films Prepared by CC-CVD", Mat. Res. Soc. Symp. Proc. 467 (1997) 307.

139. R. Schwarz, A. Dittrich, S.M. Zhou, M. Hundhausen, L. Ley, L.Y. Chen, D. Woerle, C. Manke, and M. Schulz, "Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry", Mat. Res. Soc. Symp. Proc. 467 (1997) 259.

140. R. Schwarz, J.J. Sun, R. Rocha, E. Morgado, P.P. Freitas, "Transition from Tunneling to Poole-Frenkel Type Transport in Aluminum-Nitride", Mat. Sci. Forum 258 (1997) 1259.

141. R. Schwarz, M. Vieira, A. Maçarico, S. Koynov, S. Cardoso, and J.C. Soares, "Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors upon He4 Irradiation", Mat. Sci. Forum 258 (1997) 593.

142. M. Vieira, A. Fantoni, S. Koynov, and R. Schwarz, "Wide Spectral Photodetector Based on Microcrystalline Hydrogenated Silicon Thin Films", in Semiconductor Lasera and Photodetectors, Optoelectronic Materials and Devices, SPIE Conf. Proc. Vol. 2999 (1997) 183.

143. M. Vieira, A. Maçarico, E. Morgado, S. Koynov, and R. Schwarz, "A Two-Dimensional Visible/Infrared Detector Based on mc-Si:H p-i-n Structures", J. Non-Cryst. Sol. 227-230 (1998) 1311.

144. R. Schwarz, "Dispersive Transport in Disordered Semiconductors", Invited talk at Int. Conf. on Amorphous and Microcryst. Semicond. (ICAMS-17), Budapest, August 1997; J. Non-Cryst. Sol. 227-230 (1998) 148.

145. R. Schwarz, T. Murias, J.P. Conde, P. Brogueira, and V. Chu, "Possible Origin of Large Response Times and Ambipolar Diffusion Lengths in Hot-Wire-CVD Silicon Films", Mat. Res. Soc. Symp. Proc. 507 (1998) 193.

146. M. Fernandes, M. Vieira, F. Maçarico, S. Koynov, A. Fantoni, and R. Schwarz, "Photocurrent in Microcrystalline Hydrogenated Silicon p-i-n Devices", Mat. Res. Soc. Symp. Proc. 507 (1998) 799.

147. M. Vieira, F. Maçarico, M. Fernandes, S. Koynov, and R. Schwarz, "Frequency Limits of Microcrystalline p-i-n Detectors", Proc. of CYTED, Havana, Cuba, November 13-15, 1998. Química Analítica 18 (1999) 93.

148. M. Fernandes, M. Vieira, A. Fantoni, F. Maçarico, J. Martins, and R. Schwarz, "Photocurrent in Visible/Infrared Sensors", Proc. of CYTED, Havana, Cuba, November 13-15, 1998. Química Analítica 18 (1999) 96.

149. R. Schwarz, S. Koynov, T. Fischer, “Method of Manucfacturing Microcrystalline Layers and Their Utilization”, Dec. 22, 1998, US Patent No. 5,851,904.

150. M. Vieira, A. Fantoni, M. Fernandes, and R. Schwarz, "Anisotropic Transport in Microcrystalline p-i-n Devices", Phil. Mag. B 80 (2000) 755.

151. R. Rocha, S. Koynov, P. Brogueira, R. Schwarz, V. Chu, M. Topf, D. Meister, and B.K. Meyer, "Fast and Slow UV-Photoresponse in n-Type GaN", Mat. Res. Soc. Symp. Proc. 572 (1999) 395.

152. P. Sanguino, S. Koynov, R. Schwarz, M. Fernandes, M. Vieira, R. Manso, A. Joyce, and M. Collares-Perreira, "Long-Term Stability of Microcrystalline Silicon p-i-n Solar Cells Exposed to Sun Light", Mat. Res. Soc. Symp. Proc. 557 (1999) 597.

153. M. Fernandes, F. Maçarico, J. Martins, P. Louro, M. Vieira, A. Fantoni, and R. Schwarz, "Anisotropic Transport in Microcrystalline p-i-n Devices", Mat. Res. Soc. Symp. Proc. 557 (1999) 549.

154. M. Fernandes, A. Fantoni, J. Martins, A. Maçarico, R. Schwarz, and M. Vieira, "VIS/NIR Detector Based on mc-Si:H p-i-n Structures", Thin Solid Films 364 (2000) 204.

155. D. Meister, M. Topf, I. Dirnstorfer, B.K. Meyer, R. Schwarz, and M. Heuken, "Photoconductivity in AlGaN with Different Al Contents", phys. stat. sol. (b) 216 (1999) 749.

156. E. Morgado, J. Diez, R. Schwarz, A. Maçarico, and S. Koynov, "New Results on the Modulated Photocarrier Grating Technique", J. Non-Cryst. Sol. 266-269 (2000) 290.

157. M. Vieira, A. Fantoni, M. Fernandes, and R. Schwarz, "A 3-Path Model for VIS/NIR mc-Si:H p-i-n Detectors", J. Non-Cryst. Sol. 266-269 (2000) 1223.

158. V.N. Bogomolov, N.A. Feoktistov, V.G. Golubev, J.L. Hutchinson, D.A. Kurdyukov, A.B. Pevtsov, R. Schwarz, J. Sloan, and L.M. Sorokin, "Three-Dimensional Array of Silicon Nanoscale Elements in Artificial SiO2 Opal Host", J. Non-Cryst. Sol. 266-269 (2000) 1021.

159. F. Sousa, J. Martins, M. Fernandes, A. Maçarico, R. Schwarz, and M. Vieira, "Image Processing in a mc-Si:H p-i-n Image Transducer", J. Non-Cryst. Sol. 266-269 (2000) 1228.

160. M. Niehus, S. Koynov, T. Múrias, and R. Schwarz, "Transient Thermal Gratings and Carrier-Induced Gratings in Diffusion Experiments", J. Non-Cryst. Sol. 266-269 (2000) 357.
Abstract    Paper preview: icams99.pdf

161. M. Vieira, A. Fantoni, M. Fernandes, A. Maçarico, and R. Schwarz, “A 3-Phase Model for VIS/NIR mc-Si:H p-i-n Detectors”, Sensors & Act. A 85 (2000) 175.

2000:

162. R Schwarz, N. Niehus, L. Melo, P. Brogueira, S. Koynov, M. Heuken, D. Meister, and B.K. Meyer, "Transient Photoresponse from Co Schottky Barriers on AlGaN", Mat. Res. Soc. Symp. Proc. 622 (2000) T6.15.
Abstract    Paper preview: mrsspring00.pdf

164. R. Schwarz, P. Sanguino, S. Koynov, M. Fernandes, F. Maçarico, P. Louro, and M. Vieira, “Response Time Measurements and Flying Spot Technique in Microcrystalline Silicon Solar Cells”, Mat. Res. Soc. Symp. Proc. 609 (2000).

165. M. Vieira, M. Fernandes, J. Martins, P. Louro, A. Maçarico, R. Schwarz, and M. Schubert, “Improved Resolution in a p-i-n Image Sensor by Changing the Structure of the Doped Layers”, Mat. Res. Soc. Symp. Proc. 609 (2000).

166. A. Fantoni, M. Vieira, and R. Schwarz, “Influence of Grain Boundary Band Offsets on Charge Transport Mechanism in Microcrystalline Silicon Analysed by Numerical Simulation”, Mat. Res. Soc. Symp. Proc. 609 (2000).

167. N. Feoktistov, V. Golubev, J. Hutchinson, D. Kurdyukov, A. Pevtsov, R. Schwarz, J. Sloan, and L. Sorokin, “TEM and HREM Study of Silicon and Platinum Nanoscale Ensembles in 3D Dielectric Opal Matrix”, Mat. Res. Soc. Symp. Proc. 609 (2000).

168. M. Fernandes, F. Maçarico, M. Vieira, P. Sanguino, S. Koynov, R. Schwarz, “Flying spot technique and response time measurements in microcrystalline silicon”, Proc. 16th European Photovoltaic Solar Energy Conference (PVSEC-16), Glasgow, May 2000.

169. Yu. Vygranenko, M. Fernandes, C. Nunes Carvalho, G. Lavareda, P. Louro, A. Amaral, R. Schwarz, and M. Vieira, “Silicon Heterojunction Photodiodes with Amorphous p/i Interfaces”, Proc. 16th European Photovoltaic Solar Energy Conference (PVSEC-16), Glasgow, May 2000.

170. A. Fantoni, Yu. Vygranenko, M. Fernandes, R. Schwarz, and M. Vieira, “Influence of the Band Offset on the Performance of Photodevices Based on the c-Si/a-Si:H Heterostructure”, Thin Solid Films 383 (2001) 314.

171. M. Niehus, R. Schwarz, S. Koynov, M. Heuken, D. Meister, B.K. Meyer, C. Main, S. Reynolds, “Density-of-States Distribution in AlGaN Obtained from Transient Photocurrent Analysis”, Mater. Sci. & Engineering B 82 (2001) 206.
Abstract    Paper preview: mrsspring00.pdf

173. M. Fernandes, M. Vieira, J. Martins, P. Louro, A. Maçarico, R. Schwarz, and M. Schubert, “Influence of the Transducer Configuration on the p-i-n Image Sensor Resolution”, Thin Solid Films 383 (2001) 65.

174. Yu. Vygranenko, M. Fernandes, C. Nunes Carvalho, A. Fantoni, R. Schwarz, and M. Vieira, “Surface Barrier ITO/SiO2/Si Optical Sensor with Internal Gain”, Material Science & Engineering B 69 (2000).

175. M. Vieira, M. Fernandes, P. Louro, J. Martins, A. Maçarico, R. Schwarz, and M. Schubert, "New p-i-n Imager Configuration for Spatial Resolution Improvement", Sensors and Actuators A92 (2001) 60.

176. M. Fernandes, Yu. Vygranenko, R. Schwarz, and M. Vieira, "ITO/SiOx/Si Optical Sensor with Internal Gain", Sensors and Actuators A92 (2001) 152.

177. V.Yu. Davydov, V.G. Golubev, N.F. Kartenko, D.A. Kurdyukov, A.B. Pevtsov, N.V. Sharenkova, P. Brogueira, and R. Schwarz, “Fabrication and Structural Studies of Opal – III Nitrides Nanocomposites”, Nanotechnology 11 (2000) 291.

178. M. Niehus, R. Schwarz, S. Koynov, M. Heuken, D. Meister, and B.K. Meyer, “Subbandgap Absorption from Photocurrent Spectra in AlGaN/GaN Heterostructures”, Diamond and Rel. Materials 10 (2001) 1331.

179. R. Schwarz, M. Niehus, S. Koynov, L. Melo, Jinguo Wang, S. Cardoso, and P.P. Freitas, “Pulsed Sub-band-gap Photoexcitation of AlN”, Diamond and Rel. Materials 10 (2001) 1326.
Abstract     Paper preview: diam00_aln.pdf

180. M Vieira, M. Fernandes, J. Martins, P. Louro Antunes, A. Maçarico, R. Schwarz, and M.B. Schubert, "New p-i-n Imager Configuration for Spatial Resolution Improvement", Sensors & Act. A 92 (2001) 60.

181. M. Fernandes, Yu. Vygranenko, R. Schwarz, and M. Vieira, "ITO/SiOx/Si Optical Sensor with Internal Gain", Sensors & Act. A 92 (2001) 152.

182. M. Niehus, S. Koynov, R. Schwarz, N.A. Feoktistov, V.G. Golubev, D.A. Kurdyukov, and A.B. Pevtsov, “Non-Stationary Photoconductivity of GaN Nanocomposites in Artificial Opal Matrix”, Mat. Res. Soc. Symp. Proc. 639 (2001) G11.26.
Abstract     Paper preview: mrs00fall.pdf

2001:

183. M. Vieira, M. Fernandes, P. Louro, R. Schwarz, and M. Schubert, "Optimized Laser Scanned Photodiode (LSP) Imaging Transducer", phys. stat. sol. (a) 185 (2001) 129.

184. Yu. Vygranenko, A. Malik, M. Fernandes, R. Schwarz, and M. Vieira, "UV-Visible ITO/GaP Photodiodes: Characterization and Modeling“, phys. stat. sol. (a) 185 (2001) 137.

185. P. Louro, Yu. Vygranenko, R. Schwarz, M. Fernandes, M. Vieira, J. Gloeckner, and M. Schubert, "Carrier Transport and Photogeneration in Large Area p-i-n Si/SiC Heterojunctions“, Mat. Res. Soc. Symp. Proc. 664 (2001).

186. M. Vieira, M. Fernandes, P. Louro, Yu. Vygranenko, R. Schwarz, and M. Schubert, “Tailored Laser Scanned Photodiodes (LSP) for Image Recognition”, Mat. Res. Soc. Symp. Proc. 664 (2001).

187. A. Fantoni, M. Fernandes, P. Louro, R. Schwarz, and M.Vieira, “Controlling the lateral photocurrent in a-Si:H heterojunction structures: The influence of the band offset analysed through a numerical simulation”, Mat. Res. Soc. Symp. Proc. 664 (2001).

188. S. Koynov, P. Sanguino, M. Niehus, L.V. Melo, R. Schwarz, R. Rocha, E. Pereira, “Layer-by-Layer Deposition of Group-III Nitrides by Two-Step Cyclic Process”, to be published in Materials Science & Engineering, 2001.
Abstract    Paper preview: emrs01.pdf

189. Vieira, M. Fernandes, P. Louro, R. Schwarz, and M. Schubert, „LSP Image Sensors Based on SiC Heterostructures", Appl. Surf. Science 184 (2001) 471.

190. P. Louro, R. Schwarz, Yu. Vygranenko, M. Fernandes and M. Vieira, “Transport Mechanism in High Resistive Silicon Carbide Heterostructures”, Appl. Surf. Science 184 (2001) 144.

191. R. Schwarz, P. Louro, Yu. Vygranenko, M. Fernandes, M. Vieira, and M. Schubert, "Memory Effects in Highly Resistive p-i-n Heterojunctions for Optical Applications", Thin Solid Films 403-404 (2002) 363.
  
192. M. Vieira, M. Fernandes, P. Louro, R. Schwarz, and M. Schubert, „Laser Scanned Photodiodes (LSP) for Image Sensing“, submitted to EUROSENSOR 2001, Munich, June 2001, to be published in Sensors & Actuators A, 2002.

193. P. Louro, M. Vieira, Yu. Vygranenko, M. Fernandes, R. Schwarz, and M. Schubert, „Bias Dependent Photocurrent Collection in p-i-n a-Si:H/a-SiC:H Heterojunctions“, submitted to EUROSENSOR 2001, Munich, June 2001, to be published in Sensors & Actuators A, 2002.

194. V.P. Afanasyev, A.S. Gudovskich, A.P. Sazanov, E.I. Terukov, R. Schwarz, "Fabrication and investigation of AlN films formed by reactive time-modulated magnetron sputtering", J. of Wide Band Materials (2001).

195. M. Vieira, M. Fernandes, J. Martins, P. Louro, A. Maçarico, R. Schwarz, and M. Schubert, "Laser Scanned Photodiodes (LSP) for Image Detection“,IEEE Sensors Journal 1 (2001) 158.

196a. M. Niehus, R. Schwarz, S. Koynov, P. Sanguino, M. Heuken, and B.K. Meyer, "Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure", phys. stat. sol. (a) 188 (2001) 845.
Abstract    Paper preview: ICNS01.pdf

196b.M.Niehus, R. Schwarz, S. Koynov, P. Sanguino, M. Heuken, and B.K. Meyer
"Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure"
    - presented at 4th International Conference on Nitride Semiconductors (ICNS), July 2001, Denver, USA
    - accepted for publicastion in: phys.stat.sol(b), 2001
Abstract     Paper preview: diam00_algan.pdf  

197. S. Koynov, M. Tzolov, R. Schwarz, "Chemically-Ordered a-SiC:H Films Prepared by Closed-Chamber CVD", J. Non-Cryst. Sol. 299-302 (2002) 896.

198. M. Vieira, M. Fernandes, P. Louro, R. Schwarz, M. Schubert, "Image capture devices based on p-i-n silicon carbides for biometrics applications", J. Non-Cryst. Sol. 299-302 (2002) 1245.

199. R. Schwarz, M. Fernandes, A. Fantoni, M. Vieira, P. Ferreira, and P. Sanguino, "Photocarrier Response Time Scanner“, J. Non-Cryst. Sol. 299-302 (2002) 1261.

200. S. Koynov, P. Sanguino, M. Niehus, L.V. Melo, R. Schwarz, H. Alves, and B.K. Meyer, "Layer-by-Layer Growth of GaN Films by Low-Temperature Cyclic Process", Mat. Res. Soc. Symp. Proc. 677 (2001).

2002:

201. P. Sanguino, M.Niehus, S. Koynov, R. Schwarz, H. Alves, B.K. Meyer, "Layer-by-Layer Growth of GaN on Sapphire by Low Temperature Cyclic Pulsed Laser Deposition / Nitrogen RF Plasma", Mat. Res. Soc. Symp. Proc. 722 (2002) 181.

202. R. Schwarz, M. Kunst, and M. Niehus, "Electronic and thermal effects in transient photocurrent measurements after laser and microwave excitation in amorphous and microcrystalline semiconductors", in Physics and Applications of Disordered Materials, p. 105, ed. M.A. Popescu (INOE Publishing House, Bucharest, 2002).

203. P. Sanguino, M. Niehus, S. Koynov, L. Melo, R. Schwarz, M. J. Soares, and T. Monteiro, "Searching for the Influence of the Sapphire Nitridation Conditions on GaN Films Grown by Cyclic PLD", submitted to Mat. Res. Soc. Fall Meeting, Boston, MA, December 2002.

204. M. Niehus, P. Sanguino, R. Schwarz, T. Monteiro, M.J. Soares, E. Pereira, M. Kunst, and S. Koynov, "Low Temperature Photoluminescence, Transient Photoconductivity and Microwave Reflection for Optical Properties and Transport in PLD-GaN", phys. stat. sol. (c) 0 (2002) 386.

205. R. Schwarz, P. Sanguino, T. Braz, S. Koynov, M. Fernandes, A. Maçarico, M. Vieira, A. Joyce, C. Rodrigues, and M. Collares-Pereira, "Material and Device Characterization of Microcrystalline Si Solar Cells under a 4-Year Outdoor Test", C. Cattaneio, E.U. Munoz, eds. (WIP, Munich, 2002), p. 425.

206. A. Fantoni, M. Vieira, and R. Schwarz, "A-Si:H Thin Film Tandem Solar Cell Physics Explained by Means of Numerical Simulation", C. Cattaneo, E.U. Munoz, eds. (WIP, Munich, 2002), p. 478.

207. M. Kunst and R. Schwarz, "Charge Carrier Kinetics in Semiconductors for (Opto)electronic Applications Studied by Transient Photocurrent Measurements", in Recent Res. Devel. Sci. Tech. Semiconductors 1 (2002) 93.

2003:

208. P. Sanguino, M. Niehus, L.V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, B.K. Meyer, "Characterisation of GaN Films Grown on Sapphire by Low-Temperature Cyclic Pulsed Laser Deposition / Nitrogen rf Plasma", Solid-State Electronics 47 (2003) 559.

209. M. Niehus, P. Sanguino, T. Monteiro, M.J. Soares, E. Pereira, M. Vieira, S. Koynov, R. Schwarz, "Optical Properties and Transport in PLD-GaN", Solid-State Electronics 47 (2003) 569.

210. P. Sanguino, M. Niehus, L. Melo, R. Schwarz, A. Fedorov, J.M.G. Martinho, M. J. Soares, T. Monteiro, "Photoluminescence Decay in the ps Time Regime and Structural Properties of Pulsed-Laser Deposited GaN", Proceedings of the 22nd International Conference on Defects in Semiconductors, edited by K.B. Nielsen, A.N. Larsen, G. Weyer, Physica B 340-342C (2003) 457-461.

211. P. Louro, M. Vieira, A. Fantoni, M. Fernandes, Yu. Vygranenko, and R. Schwarz, “Bias controlled spectral sensitivity in a-SiC:H p-i-n devices”, Thin Solid Films 427 (2003) 196-200.

2004:

212. P. Louro, A. Fantoni, M. Fernandes, A. Maçarico, R. Schwarz and M. Vieira, "Optoelectronic Characterization of a-SiC:H Stacked Devices", Journal of Non-Crystalline Solids 338-340 (2004) 345.
 
213. M. Vieira, M. Fernandes, A. Fantoni, P. Louro and R. Schwarz, "Optically addressed read–write device based on tandem heterostructure", Journal of Non-Crystalline Solids 338-340 (2004) 754.
 
214. M. Niehus, P. Sanguino, R. Schwarz, A. Fedorov, J.M.G. Martinho, M. J. Soares, T. Monteiro, F. Wünsch, and M. Kunst, "Non-Radiative and Radiative Properties of PLD-Deposited Polycrystalline GaN Studied by UV ps-to-ns Laser Pulses", J. Non-Cryst. Sol. 338-340 (2004) 460.

215. R. Schwarz, T. Braz, P. Sanguino, P. Ferreira, A. Maçarico, M. Vieira, C.P. Marques, E. Alves, "Degradation of Particle Detectors Based on a-Si:H by 1.5 MeV He4 and 1 MeV Protons", J. Non-Cryst. Sol. 338-340 (2004) 814.

216. M. Niehus, P. Sanguino, T. Monteiro, M.J. Soares, and R. Schwarz, "Spontaneous Emission Enhancement in Micropatterned GaN", Superlattices & Microstructures 36 (2004) 675.

217. “ROSE’S LAW IN IRRADIATED AMORPHOUS SILICON FILM DETECTORS”, submitted to E-MRS, Strasbourg, May 2004.
 
218. R. Schwarz, M. Fernandes, J. Martins, A. Fantoni,  M. Vieira, P. Sanguino, N. Carvalho and T. Muschik, "Sensor element for a metal-insulator-semiconductor camera system (MISCam)", Sensors & Actuators A. Physical 155/2-3 (2004 ) 331.

219. M. Vieira, P. Louro, M. Fernandes, A. Fantoni, C. Mendes, and R. Schwarz, “A real time optical signal and image processing device”, Amorphous and heterogeneous silicon based films - 2004, Mat. Res. Soc. Symp. Proc., (S. Francisco, April 12-16 USA), 808 (2004) A4.44.1, pp. 501-506.

220. M. Vieira, P. Louro, M. Fernández, R. Schwarz, and M. Schubert, “Large are p-i-n flexible image sensors”, Amorphous and heterogeneous silicon based films - 2004, Mat. Res. Soc. Symp. Proc., (S. Francisco, April 12-16 USA), 814 (2004) I7.11.

221. M. Vieira, M. Fernandes, P. Louro, C. Mendes, R. Schwarz, and Yu. Vygranenko “OSIP: Optical image processing device optimized for optical readout”, 3rd aSi-Net workshop, (Bratislava, Slovakia, February 25-27, 2004).

222. M. Vieira, M. Fernandes, P. Louro, C. Mendes, R. Schwarz, Yu. Vygranenko, “OSIP: optical signal and image processing device optimized for optical readout”, European Materials Research Society Symposium, (Strasbourg, France, May 24-28, 2004).

223. M. Fernandes, A. Fantoni, P. Louro, G. Lavareda, N. Carvalho, R. Schwarz, and M. Vieira, “Fine Tuning of the spectral collection efficiency in multilayer”, European Materials Research Society Symposium, (Strasbourg, France, May 24-28, 2004).

224. R. Schwarz, T. Braz, P. Sanguino, F. Maçarico, M. Vieira, M. Fernandes, F. Wunsch, M. Kunst, C.P. Marques, E. Alves, P. Louro, C. Mendes, and Yu. Vygranenko “Changes in spectral response of thick amorphous silicon detectors after irradiation”, 3rd aSi-Net workshop, (Bratislava, Slovakia, February 25-27, 2004).

225. M. Vieira, P. Louro, M. Fernandes, R. Schwarz, M. Vieira, “Large area P-I-N flexible image sensitive devices deposited on plastic substrates”, Ibersensor-2004, IV congresso iberoamericano de sensores, 27-29 de Outubro, 2004, Puebla, México.

2005:

226. P. Sanguino, O. M. N. D. Teodoro, M. Niehus, C. P. Marques, A. M. C. Moutinho, E. Alves, and R. Schwarz, “Structural and Composition Analysis of GaN Films Deposited by Cyclic PLD at Different Substrate Temperatures”, Sensors and Actuators A 121 (2005) 131.

227. M. Fernandes, A. Fantoni, P. Louro, G. Lavareda, N. Carvalho, R. Schwarz, M. Vieira, “FINE-TUNING OF THE SPECTRAL COLLECTION EFFICIENCY IN MULTILAYER JUNCTIONS”, Thin Solid Films (2005).

228. M. Niehus and R.Schwarz, “Thermalization and Recombination in Exponential Band Tail States”, (presented at the Int. Conf. on Nitride Semiconductors, ICNS-6, 2005, Bremen, Germany) phys. stat. sol. (c) 3 (2006) 1637.

229. M. Niehus and R.Schwarz, “Diffusion Lengths in GaN Obtained From Steady- State Photocarrier Gratings (SSPG)”, (presented at the Int. Conf. on Nitride Semiconductors, ICNS-6, 2005, Bremen, Germany) phys. stat. sol. (c) 3 (2006) 2103.

230. E. Morgado, R. Schwarz, T. Braz, C. Casteleiro, A. Maçarico, M. Vieira, E. Alves, “RADIATION INDUCED DEFECTS IN a-Si:H BY 1.5 MeV He4  BEAM PARTICLE STUDIED BY PHOTOCONDUCTIVITY AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY”, J. Non-Cryst. Sol. (2006).

231. P. Sanguino, L.V. Melo, R. Schwarz, M. Wilhelm, M. Kunst, O. Teodoro, “Compositional Analysis of Laser-Deposited GaN Films by AFM, EDX and XPS”, Oral presentation at the RIVA-5 meeting, Guimarães, September 19 – 21, 2005.

232. R. Schwarz, A.F. Maçarico, T. Braz, C. Casteleiro, P. Sanguino, M. Niehus, Y.Vygranenko, M. Vieira, E. Alves, F. Wünsch, and M. Kunst, “Radiation Hardness of a-Si:H based particle detectors”, JETC 05, #042.

233. M. Niehus, R. Schwarz, “Propriedades ópticas e transporte electrónico transiente, relacionados com a desordem, em semicondutores de grande hiato”, JETC 05, #125.

234. M. Niehus and R.Schwarz, “Non-Linear Optical Spontaneous Photoluminescence Emission Enhancement Effect In Wide Gap Gallium Nitride Thin Films”, JETC 05, #124.

"Transient thermal gratings and carrier-induced gratings in diffusion experiments"
 Complications can arise during measurements of the ambipolar diffusion coefficient, Damb, of charged carriers by the transient grating method (TG) due to the concomitant decay of a transient thermal grating. The thermal diffusion coefficient, Dth, of hydrogenated amorphous silicon (a-Si:H) is of the same order of magnitude as Damb, about 10-2 to 1 cm2/s. For calibration purposes we measured the thermal change of refractive index, dn/dT, by optical reflection. We monitored the temperature decay after pulsed laser excitation using transient photoreflectance (TPR). A thermal diffusion process is confirmed by a near square-root time dependence. In grating experiments, the initial temperature and its time dependence can be monitored by TPR. In order to determine Damb a good thermal connection to the substrate and a high quality material is needed.

"Transient photoresponse from Co Schottky barriers on AlGaN"
Co on AlGaN is expected to form a large barrier Schottky contact due to its high work function. We have used this material combination with 18 % of Al in AlxGaN for the study of transient photoresponse in the photovoltaic mode and in secondary photocurrent measurements after pulsed laser excitation. In reverse bias and in short-circuit mode a fast decay with a characteristic time of a few microseconds is dominant at room temperature. This mode is appropriate for UV detector operation. At elevated temperature, a much slower tail extending to several milliseconds is also observed. In forward bias operation the slow tail is dominating at any temperature. We discuss this asymmetry with respect to fast minority carrier collection within the space charge region for primary photocurrents and the slower majority carrier transport in forward bias.

"Density-of-States Distribution in AlGaN obtained from Transient Photocurrent Analysis"
Dark conductivity and photoconductivity in AlxGa1-xN (x = 0.025, 0.18) films prepared by MOCVD on a sapphire substrate with a GaN bottom layer have been investigated. In the temperature range 300?500 K, the barrier at the heterostructure interface appears to play an important role in the thermal activation of the photocurrent after pulsed laser excitation, for high aluminium concentrations. Transient photoconductivity measurements on Al0.025GaN films have been made and are interpreted in terms of multiple trapping and release of carriers in localised states. The current transient is characterised by an initial rapid decay in the sub-microsecond regime, followed by a much slower power law decay out to tens of milliseconds. These features, which occur for both sub- and super-gap excitation, are consistent with the presence of a steep exponential tail of states at the band edge, followed by a broad peak centered at approximately 0.4 eV below Ec.
Paper preview: emrs00.pdf

Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures
We have measured optical absorption in Al0.18GaN/GaN heterostructures, prepared by MOCVD on sapphire substrates, by the constant photocurrent method (CPM) between 300 and 500K. The constant photocurrent mode is appropriate since the response time decreases when the incident light energy crosses from below to above the bandgap energy. The films were further characterized by temperature-dependent dark conductivity and Hall measurements. We have found exponential band tails exceeding thermal broadening in the absorption spectra below the bandgap energy indicating the presence of disorder and/or deep defects.
Paper preview: diam00_algan.pdf

Pulsed Subbandgap Photoexcitation of AlN
Since AlN is a wide bandgap semiconductor it is usually not possible to induce photocurrents with light below 6.2 eV of energy. However, employing high power density laser pulses of 266 nm (4.66 eV) and 532 nm (2.34 eV), we succeeded to monitor the transient photocurrent (TPC) in transverse and parallel configuration using metal-insulator-metal (MIM) structures and single films, respectively. Absorption is possible due to excitation from deep defects which are indicated by the power-law decays of the photocurrents with exponents below unity. The thickness dependence of the magnitude of the photocurrent and RBS profiling lead us to believe that photocurrents originate mainly from an oxygen-rich transition layer. Films down to a thickness of 5 Å can still be characterized by TPC measurements.
Paper preview: diam00_aln.pdf

Non-stationary photoconductivity of GaN nanocomposites in artificial opal matrix
It was recently proposed to use synthetic opals as matrices (hosts) for obtaining 3D arrays of electronic nanodevices. In the present work the opal matrices were infiltrated with GaN. We study electronic properties of Opal-GaN, by means of transient photoconductivity (TPC) measurements using 5 ns pulses at wavelengths above (266nm) and below (532nm) the GaN bandgap (3.4eV). A broad plateu is observed in the photocurrent decay covering several orders of magnitude. We compare the results with measurements in conventional GaN.
Paper preview: mrs00fall.pdf

Layer-by-layer deposition of group-III nitrides by two-step cyclic process
Pulsed-Laser-Deposition (PLD) of group-III nitrides is an alternative of the conventional methods for preparation of these attractive large-band-gap materials. In contrast with the commonly used MO CVD, the PLD technique can prepare extremely pure films, which are free of carbon inclusions. On the other hand, the PLD films usually suffer from insufficient nitrogen incorporation and structural imperfection. The origin of these problems can be found in the contradictory requirements to the gas (plasma) atmosphere. It has to be an efficient nitrogen source (high reactivity, elevated pressure), but it also should permit transport of the laser-ablated species to the growing film (low pressure).
We are preparing AlN and GaN films by applying a two-step cyclic process, which is intended to avoid the mentioned problems:
- During the first step, an ultra-thin layer of nitrogen-poor material is deposi-ted by PLD. A Nd:YAG laser (1064 nm) is used to ablate a target of pure Ga (Al). The rest atmosphere of N2 is kept at pressure as low as 10-4 mbar.
- During the second step, additional nitrogen is incorporated into the last deposited layer by sustaining an intensive glow discharge in pure N2 at pressure as high as 1 mbar. The duration of this step controls the N-incorpora-tion in the film. It also has a favourable effect on the film structure as the atoms in the ultra-thin layer preserve their mobility.
The cycle of two steps is repeated until thick enough film is obtained (layer-by-layer deposition).
Two kinds of AlN and GaN samples are studied ? hetero-epitaxial films on sapphire substrates, deposited in the temperature range 600-800oC and polycrystalline films on quartz and Si substrates at lower temperatures. The effect of the N-content of the films is also investigated by depositing series of samples at different duration of the second step.
X-ray diffraction, optical transmission spectra, PL spectra, Hall effect and conductivity measurements, as well as photoconductivity measurements are used to characterize the deposited samples.
Paper preview: emrs01.pdf

Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure"
We present spectral photoconductivity (SPC) and transient photoconductivity (TPC) studies in a Al0.18Ga0.82N/GaN single heterostructure. We attribute near bandgap peaks in the SPC between 300K and 500K to a deep trap-conduction band transition. The trap distribution lies approximately 100meV above the valence band edge, for both GaN and AlGaN layer. In TPC studies we show that charge buildup after strong
pulsed laser excitation can be detected by anomalous photocurrent decay.
Paper preview: ICNS01.pdf